Mg2Si1-xSnx, a case study of pressure effects on a thermoelectric material

dc.contributor.authorGana, Hadjer
dc.contributor.authorLaggoun, Ibrahim
dc.date.accessioned2023-01-19T11:27:37Z
dc.date.available2023-01-19T11:27:37Z
dc.date.issued2018
dc.description.abstractIn this work, we carried out a theoretical study using the augmented and linearized augmented plan wave method (FP-LAPW), based on the density functional theory (DFT) implemented in the WIEN2K code, to determine the structural and electronic properties of the compounds Mg2Si1-xSnx (x = 0.0.25,0.5, 0.75, 1) at pressure (P = 5Gpa, 10Gap, 15Gpa), thus, the calculation of transport properties by semiclassical BoltzTraP methods. Exchange potential and correlation (XC) is processed by the generalized gradient approximation (GGA) and the modified Beck Jonhson approximation (mBJ).
dc.identifier.urihttps://dspace.lagh-univ.dz/handle/123456789/2298
dc.language.isoen
dc.publisherUniversité Amar Telidji - Laghouat - Département des sciences de la matière
dc.titleMg2Si1-xSnx, a case study of pressure effects on a thermoelectric material
dc.typeThesis

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