Etude comparative des effets électriques d’un transistor HEMT a base d’AlGaN/GaN etd’AlGaAs/GaAs

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dc.contributor.authorKHELIFI NOUR EDDINE
dc.contributor.authorLAOUER AMMARA
dc.contributor.authorBELLAKHDAR Aissa
dc.date.accessioned2023-01-22T13:14:46Z
dc.date.available2023-01-22T13:14:46Z
dc.date.issued2022
dc.descriptionOPTION : instrumentation
dc.identifier.urihttps://dspace.lagh-univ.dz/handle/123456789/2556
dc.language.isofr
dc.publisherUniversité Amar Thelidji- Laghouat FACULTE: DE TECHNOLOGIE DEPARTEMENT D’ELECTRONIQUE
dc.titleEtude comparative des effets électriques d’un transistor HEMT a base d’AlGaN/GaN etd’AlGaAs/GaAs
dc.typeThesis

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